Enhanced Superconductivity in X4H15 Compounds via Hole‐Doping at Ambient Pressure
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Science"
DOI: 10.1002/advs.202508419
Abstract: This study presents a computational investigation of X4H15 compounds (where X represents a metal) as potential superconductors at ambient conditions or under pressure. Through systematic density functional theory calculations and electron–phonon coupling analysis, it is… read more here.
Keywords: hole; x4h15 compounds; ambient pressure; superconductivity ... See more keywords
Hole doping induced half-metallic itinerant ferromagnetism and giant magnetoresistance in CrI3 monolayer
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.147693
Abstract: Abstract The exploit of magnetic devices with high magnetoresistance is vital for the development of magnetic sensing and data storage technologies. Here, using density functional calculations combined with Monte Carlo simulations, we explore the magnetic… read more here.
Keywords: cri3 monolayer; magnetoresistance; cri3; hole doping ... See more keywords
Effect of the magnetic field and electron/hole doping on electronic heat capacity and Pauli spin susceptibility of monolayer MoS2 in the presence of electron-phonon coupling
Sign Up to like & getrecommendations! Published in 2020 at "Materials today communications"
DOI: 10.1016/j.mtcomm.2020.101859
Abstract: Abstract We investigate the total electronic heat capacity (EHC) and Pauli spin susceptibility (PSS) of monolayer MoS2 in the presence of an external magnetic field and electron/hole doping by using the Holstein model. The total… read more here.
Keywords: magnetic field; electron; monolayer mos2; hole doping ... See more keywords
Rational Regulation of High-Entropy Perovskite Oxides through Hole Doping for Efficient Oxygen Electrocatalysis.
Sign Up to like & getrecommendations! Published in 2025 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.4c20338
Abstract: Due to the high configuration entropy, unique atomic arrangement, and electronic structures, high-entropy materials are being actively pursued as bifunctional catalysts for both the oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) in rechargeable… read more here.
Keywords: entropy perovskite; orr oer; entropy; hole doping ... See more keywords
Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor.
Sign Up to like & getrecommendations! Published in 2022 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.2c06283
Abstract: p-Type doping in Cu(I)-based semiconductors is pivotal for solar cell photoabsorbers and hole transport materials to improve the device performance. Impurity doping is a fundamental technology to overcome the intrinsic limits of hole concentration controlled… read more here.
Keywords: hole doping; defect; impurity; cation ... See more keywords
Mott gap collapse in lightly hole-doped Sr2−xKxIrO4
Sign Up to like & getrecommendations! Published in 2020 at "Nature Communications"
DOI: 10.1038/s41467-020-16425-z
Abstract: The evolution of Sr2IrO4 upon carrier doping has been a subject of intense interest, due to its similarities to the parent cuprates, yet the intrinsic behaviour of Sr2IrO4 upon hole doping remains enigmatic. Here, we… read more here.
Keywords: sr2 xkxiro4; hole doped; hole doping; doped sr2 ... See more keywords
Monolayer GaOCl: a novel wide-bandgap 2D material with hole-doping-induced ferromagnetism and multidirectional piezoelectricity.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr02821b
Abstract: Two-dimensional (2D) materials with excellent properties are emerging as promising candidates in electronics and spintronics. In this work, a novel GaOCl monolayer is proposed and studied systematically based on first-principles calculations. With excellent thermal and… read more here.
Keywords: hole doping; piezoelectricity; bandgap; multidirectional piezoelectricity ... See more keywords
Performance enhancement of 2D tin-halide perovskite transistors via molecule-assisted grain boundary passivation and hole doping
Sign Up to like & getrecommendations! Published in 2024 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ad3b0a
Abstract: Tin (Sn2+)-based halide perovskites have garnered considerable interest for potential applications in field-effect transistors, owing to their low-cost solution processing capability and favorable hole transport properties. However, the polycrystalline nature of halide perovskite films necessitates… read more here.
Keywords: boundary passivation; halide; grain boundary; hole doping ... See more keywords
Hole doping and antiferromagnetic correlations above the Néel temperature of the topological semimetal (Sr1−xKx)MnSb2
Sign Up to like & getrecommendations! Published in 2019 at "Physical Review B"
DOI: 10.1103/physrevb.100.014437
Abstract: Neutron diffraction and magnetic susceptibility studies of orthorhombic single crystal {\Ksub} confirm the three dimensional (3D) C-type antiferromagnetic (AFM) ordering of the Mn$^{2+}$ moments at $T_{\rm N}=305 \pm 3$ K which is slightly higher than… read more here.
Keywords: doping antiferromagnetic; temperature topological; hole; antiferromagnetic correlations ... See more keywords
Exploring spin squeezing in the Mott insulating regime: Role of anisotropy, inhomogeneity, and hole doping
Sign Up to like & getrecommendations! Published in 2024 at "Physical Review B"
DOI: 10.1103/physrevb.109.214310
Abstract: Spin-squeezing in systems with single-particle control is a well-established resource of modern quantum technology. Applied in an optical lattice clock can reduce the statistical uncertainty of spectroscopic measurements. Here, we consider dynamic generation of spin-squeezing… read more here.
Keywords: spin squeezing; squeezing mott; role; exploring spin ... See more keywords
Stabilizing polar phases in binary metal oxides by hole doping
Sign Up to like & getrecommendations! Published in 2022 at "Physical Review Materials"
DOI: 10.1103/physrevmaterials.7.044412
Abstract: The recent observation of ferroelectricity in the metastable phases of binary metal oxides, such as HfO2, ZrO2, Hf0.5Zr0.5O2, and Ga2O3, has garnered a lot of attention. These metastable ferroelectric phases are typically stabilized through epitaxial… read more here.
Keywords: hole doping; stabilizing polar; binary metal; metal oxides ... See more keywords