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Published in 2021 at "Nature Materials"
DOI: 10.1038/s41563-021-01074-4
Abstract: A highly conductive metallic gas that is quantum mechanically confined at a solid-state interface is an ideal platform to explore non-trivial electronic states that are otherwise inaccessible in bulk materials. Although two-dimensional electron gases have…
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Keywords:
hole gas;
dimensional hole;
organic semiconductors;
gas ... See more keywords
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Published in 2018 at "Nanoscale"
DOI: 10.1039/c8nr05590d
Abstract: Core-shell nanowires (NWs) composed of silicon and germanium can be used to realize high electron (hole) mobility transistors (HEMTs) by suppressing impurity scattering due to their band offset structure and selective doping. Boron doped p-type…
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Keywords:
shell;
hole gas;
gas accumulation;
core ... See more keywords
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Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0139158
Abstract: A two-dimensional hole gas (2DHG) induced by polarization charges at the GaN/AlGaN hetero-interface is attracting much attention because of its potential to develop p-channel transistors required for GaN complementary logic integrated circuits. This platform is…
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Keywords:
composition;
hole gas;
density;
gan algan ... See more keywords
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Published in 2022 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/aca61c
Abstract: Diamond is a wide bandgap semiconductor (bandgap: 5.5 eV). However, through impurity doping, diamond can become a p-type or n-type semiconductor. The minimum resistivity of p-type semiconductor diamond is less than 10−3 Ω cm, which…
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Keywords:
high frequency;
dimensional hole;
hole gas;
two dimensional ... See more keywords