Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization
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DOI: 10.1016/j.sse.2019.107728
Abstract: Abstract A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while… read more here.
Keywords: impact ionization; hole impact; avalanche; avalanche photodiodes ... See more keywords