Improvement in electrostatic characteristics of doped TFETs by hole layer formation
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DOI: 10.1007/s10825-018-1139-3
Abstract: We present a distinct approach to enhance the performance of physically doped tunnel field-effect transistors (TFETs) based on creation of a layer of positive charge at the semiconductor–insulator interface in the source region. Formation of… read more here.
Keywords: voltage; source; hole layer; formation ... See more keywords