Self‐Trapped Hole Migration and Defect‐Mediated Thermal Quenching of Luminescence in α‐ and β‐Ga2O3
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DOI: 10.1002/adfm.202517876
Abstract: Gallium oxide (Ga2O3) is a promising ultrawide bandgap semiconductor for next‐generation power electronics and optoelectronic devices. Here, temperature‐dependent and polarization‐resolved photoluminescence excitation spectroscopy data, complemented by hybrid‐functional first‐principles calculations, are presented, and a microscopic model… read more here.
Keywords: ga2o3; hole migration; luminescence; self trapped ... See more keywords