Stochastic simulation of electron-hole recombination in two-dimensional and three-dimensional inhomogeneous semiconductors. Part I. Stochastic model and algorithms
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DOI: 10.3103/s8756699017010149
Abstract: This paper describes the stochastic models of electron-hole recombination in inhomogeneous semiconductors in two-dimensional and three-dimensional cases, which were developed on the basis of discrete (cellular automation) and continuous (Monte Carlo method) approaches. The mathematical… read more here.
Keywords: inhomogeneous semiconductors; two dimensional; hole recombination; dimensional three ... See more keywords