Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging
Sign Up to like & getrecommendations! Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.05.012
Abstract: Abstract Density Functional Theory (DFT) calculations demonstrate that holes can trap in crystalline and amorphous HfO2 and Al2O3 in both single- and bipolaron states. Polarons in the crystalline phase have small trapping energies of the… read more here.
Keywords: amorphous hfo2; hole trapping; positive charging; hfo2 al2o3 ... See more keywords
Design of a Hole Trapping Ligand.
Sign Up to like & getrecommendations! Published in 2017 at "Nano letters"
DOI: 10.1021/acs.nanolett.6b04213
Abstract: A new ligand that covalently attaches to the surface of colloidal CdSe/CdS nanorods and can simultaneously chelate a molecular metal center is described. The dithiocarbamate-bipyridine ligand system facilitates hole transfer through energetic overlap at the… read more here.
Keywords: hole trapping; design hole; trapping ligand; spectroscopy ... See more keywords
Water-Assisted Hole Trapping at the Highly Curved Surface of Nano-TiO2 Photocatalyst
Sign Up to like & getrecommendations! Published in 2018 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.7b11061
Abstract: Heterogeneous photocatalysis is vital in solving energy and environmental issues that this society is confronted with. Although photocatalysts are often operated in the presence of water, it has not been yet clarified how the interaction… read more here.
Keywords: hole trapping; water; assisted hole; highly curved ... See more keywords
Unveiling hole trapping and surface dynamics of NiO nanoparticles† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c7sc03442c
Sign Up to like & getrecommendations! Published in 2018 at "Chemical Science"
DOI: 10.1039/c7sc03442c
Abstract: Mesoporous NiO is used as p-type material in photoelectrochemical energy conversion devices. The presence of two kinds of hole traps can affect device performance. Here, after band-gap excitation, the relaxation of the hole into two… read more here.
Keywords: hole trapping; hole; unveiling hole; dynamics nio ... See more keywords
Hole-Trapping Process at Al2O3/GaN Interface Formed by Atomic Layer Deposition
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2734914
Abstract: The hysteresis of the capacitance–voltage (C–V) characteristics of an Al2O3/n-GaN metal–insulator–semiconductor structure was evaluated under light (white LED)-irradiation and dark conditions. The hysteresis was not observed under the dark condition but was observed under the… read more here.
Keywords: hole trapping; sub sub; condition; led irradiation ... See more keywords