Separation of electron and hole trapping components of PBTI in SiON nMOS transistors
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113746
Abstract: Abstract In nMOS transistors the impact of positive bias temperature instability (PBTI) on the device performance is typically considered negligible and has thus been barely studied in the past. However, an accurate description of this… read more here.
Keywords: sion nmos; hole traps; electron hole; sion ... See more keywords
Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5098965
Abstract: We studied deep levels in quartz-free hydride-vapor-phase epitaxy (QF-HVPE)-grown homoepitaxial n-type GaN layers within which three electron and eight hole traps were detected. The dominant electron and hole traps observed in the QF-HVPE-grown GaN layers… read more here.
Keywords: gan layers; hole traps; quartz free; spectroscopy ... See more keywords