Effect of hot carrier stress on device junctions measured by electron holography and scanning capacitance microscopy
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DOI: 10.1063/1.5009243
Abstract: The effect of hot carrier injection on the FET's junction properties has been investigated for CMOS NFET devices. Junction profiles and carrier concentration of stressed and unstressed devices are measured and compared by dual lens… read more here.
Keywords: microscopy; effect hot; holography scanning; carrier ... See more keywords