Compositional control of homogeneous InGaN nanowires with the In content up to 90.
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DOI: 10.1088/1361-6528/aaec39
Abstract: Homogenous InGaN nanowires with a controlled indium composition up to 90% are grown on GaN/c-Al2O3 templates by catalyst-free hydride vapor phase epitaxy using InCl3 and GaCl as group III element precursors. The influence of the… read more here.
Keywords: homogeneous ingan; ingan nanowires; vapor phase; composition ... See more keywords