Homojunction structure amorphous oxide thin film transistors with ultra-high mobility
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DOI: 10.1088/1674-4926/44/5/052101
Abstract: Amorphous oxide semiconductors (AOS) have unique advantages in transparent and flexible thin film transistors (TFTs) applications, compared to low-temperature polycrystalline-Si (LTPS). However, intrinsic AOS TFTs are difficult to obtain field-effect mobility (μ FE) higher than… read more here.
Keywords: homojunction; homojunction structure; thin film; mobility ... See more keywords