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Published in 2025 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/adb87c
Abstract: This study investigates the influence of interface trap charges (ITCs) on the performance parameters of the proposed lateral hetero-stacked source with pocket n-type tunneling field-effect transistor (HSSP-nTFET). The influence of different concentrations of donor and…
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Keywords:
temperature;
hssp ntfet;
effect;
reliability ... See more keywords