Power Enhancement of 265 nm DUV-LED Flip-Chip by HVPE-AlN High-Temperature Annealing
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DOI: 10.3390/mi14020467
Abstract: In this paper, the X-ray diffraction full width at half the maximum (XRD FWHM) of a 3.5 µm-thick hydride vapor phase epitaxy-aluminum nitride (HVPE-AlN) (002) face after high-temperature annealing was reduced to 129 arcsec. The… read more here.
Keywords: temperature annealing; high temperature; hvpe aln; hvpe ... See more keywords