Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5098965
Abstract: We studied deep levels in quartz-free hydride-vapor-phase epitaxy (QF-HVPE)-grown homoepitaxial n-type GaN layers within which three electron and eight hole traps were detected. The dominant electron and hole traps observed in the QF-HVPE-grown GaN layers… read more here.
Keywords: gan layers; hole traps; quartz free; spectroscopy ... See more keywords
Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0053766
Abstract: The propagation behavior of threading dislocations (TDs) and the effects of Burgers vectors in hydride vapor phase epitaxy (HVPE) GaN bulk crystals generated on Na-flux-grown GaN and in a commercially available HVPE-grown GaN bulk crystal… read more here.
Keywords: microscopy; threading dislocations; flux grown; gan bulk ... See more keywords