Homogeneous and well-aligned GaN nanowire arrays via a modified HVPE process and their cathodoluminescence properties.
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DOI: 10.1039/d1nr07753h
Abstract: In this work, we demonstrate the growth of homogeneous and well-aligned [0001]-oriented 1-D GaN nanoarrays via a modified hydride vapor phase epitaxy (HVPE) process using GaCl3 and NH3 as precursors. The density and length of… read more here.
Keywords: aligned gan; via modified; well aligned; hvpe process ... See more keywords