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Published in 2021 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2021.114407
Abstract: Abstract In this study, the relationship between the composition ratio of Bi-Sn and the thermal conductivity of a hybrid bonding layer composed of Cu nanoparticles and eutectic Bi-Sn powder was investigated. The hybrid bonding layer…
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Keywords:
thermal conductivity;
high temperature;
hybrid bonding;
ratio ... See more keywords
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Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c09796
Abstract: Cu/SiO2 hybrid bonding with planarized dielectric and isolated metal connections can realize ultradense interconnects (e.g., ≤1 μm) by eliminating the microbumps and underfill through the direct bonding of Cu-Cu and SiO2-SiO2. However, the low-temperature bonding…
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Keywords:
low temperature;
hybrid bonding;
memory centric;
sio2 ... See more keywords
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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2915332
Abstract: A low-temperature wafer-level polyimide/metal asymmetric hybrid bonding structure using Cu/Sn metal and low-curing temperature polyimide is proposed in this paper. The Cu/Sn and polyimide can be bonded simultaneously at 250 °C. An ultrathin nickel (Ni)…
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Keywords:
level polyimide;
asymmetric wafer;
integration;
wafer level ... See more keywords
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Published in 2022 at "Materials"
DOI: 10.3390/ma15051888
Abstract: We adopted (111)-oriented Cu with high surface diffusivity to achieve low-temperature and low-pressure Cu/SiO2 hybrid bonding. Electroplating was employed to fabricate arrays of Cu vias with 78% (111) surface grains. The bonding temperature can be…
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Keywords:
contact resistance;
low temperature;
sio2 hybrid;
temperature ... See more keywords