Area-Efficient Finite Field Multiplication Using Hybrid SET-MOS Technology
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2022.3186810
Abstract: Single-electron transistors (SETs) exhibit a unique characteristic of Coulomb oscillation which can find many digital applications with area efficiency. More specifically, both MOS and SET devices can be used to implement XOR gates with almost… read more here.
Keywords: set mos; area; finite field; hybrid set ... See more keywords
Influence of Quantum Dot Characteristics on the Performance of Hybrid SET-FET Circuits
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2937141
Abstract: Quantum dots (QDs) can be used as conductive islands to build-up single-electron transistors (SETs). The characteristics of the QDs define the functional performance of the SETs. In consequence, analyzing the influence of the variations of… read more here.
Keywords: performance; hybrid set; influence; performance hybrid ... See more keywords