Thin film encapsulation for quantum dot light-emitting diodes using a-SiNx:H/SiOxNy/hybrid SiOx barriers
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DOI: 10.1039/d1ra07712k
Abstract: A facile thin film encapsulation (TFE) method having a triple-layered structure of a-SiNx:H/SiOxNy/hybrid SiOx (ASH) on QD-LEDs was performed utilizing both reproducible plasma-enhanced chemical vapor deposition (PECVD) and simple dip-coating processes without adopting atomic layer… read more here.
Keywords: hybrid siox; film encapsulation; encapsulation; sioxny hybrid ... See more keywords