Device Modeling of MgO-Barrier Tunneling Magnetoresistors for Hybrid Spintronic-CMOS
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2018.2870731
Abstract: Spintronic sensors, which are based on the tunneling-magnetoresistive (TMR) effect, have been utilized in detecting low-magnetic fields. However, still no computer-based model of these devices is available to integrated circuit designer to implement them in… read more here.
Keywords: mgo barrier; spintronic cmos; hybrid spintronic; model ... See more keywords