Impact of Hydrogen-Controlled Thermal ALD SiO2 Insulators on IGZO Channel FET to Optimize the Electrical Performanceâ€
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DOI: 10.1039/d4tc04277h
Abstract: Oxide semiconductors (OS) are attractive materials for 3D device applications such as monolithic stacked, channel-all-around, and gate-all-around structures, owing to their low off-current, high field-effect mobility, 3D processability, and superior... read more here.
Keywords: ald sio2; hydrogen controlled; sio2 insulators; impact hydrogen ... See more keywords