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Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400770
Abstract: In this work, a new Field Effect Transistor device concept based on hydrogen‐terminated diamond (H‐diamond) is demonstrated that operates in an Accumulation Channel rather than a Transfer Doping regime. The FET devices demonstrate both extreme… read more here.
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Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.05.195
Abstract: Abstract The adsorption and migration activation energies of a silicon (Si) atom on a hydrogen-terminated diamond (001) surface were calculated using first principles methods based on density functional theory. On the fully hydrogen-terminated surface, the… read more here.
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Published in 2021 at "Carbon"
DOI: 10.1016/j.carbon.2021.01.121
Abstract: Abstract The normally-off Yttrium (Y) gate hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with 5 nm Al2O3 dielectric layer has been successfully fabricated and evaluated in this work. The threshold voltage is extracted to be -… read more here.
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Published in 2018 at "Diamond and Related Materials"
DOI: 10.1016/j.diamond.2017.11.016
Abstract: Abstract Fabrication of normally-off hydrogen-terminated diamond field-effect transistors (FET) has been carried out by using 3 nm Al2O3 dielectric layer, which was formed by thermally oxidizing 3 nm Al in air. 100 nm Al was covered on the… read more here.
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Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c17544
Abstract: The ability to control the charge and spin states of nitrogen-vacancy (NV) centers near the diamond surface is of pivotal importance for quantum applications. Hydrogen-terminated diamond is promising for long spin coherence times and ease… read more here.
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Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/1.5141775
Abstract: A hydrogen-terminated diamond (H-terminated diamond) surface supports a two-dimensional (2D) p-type surface conductivity when exposed to the atmosphere, as a result of the surface transfer doping process. The formation of reliable Ohmic contacts that persist… read more here.
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Published in 2020 at "AIP Advances"
DOI: 10.1063/5.0002120
Abstract: The fabrication of a single-crystal hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with HfSiON/Al2O3 bilayer dielectric has been carried out. HfSiON and Al2O... read more here.
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Published in 2025 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2025.3584012
Abstract: This article presents two physical-based analytical models for 2-D hole gas (2DHG) density in Hydrogen-terminated Diamond (HD) devices. The three-band model is derived from the up-bending band structure in the surface of HD analyzed by… read more here.
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Published in 2023 at "Crystals"
DOI: 10.3390/cryst13050783
Abstract: In this paper, two dielectric layers of Al2O3 and Gd2O3 were prepared by an atomic layer deposition (ALD) and magnetron sputtering deposition (SD), respectively. Based on this, a metal-oxide-semiconductor field-effect transistor (MOSFET) was successfully prepared… read more here.
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Published in 2022 at "Materials"
DOI: 10.3390/ma15145082
Abstract: SnOx films were deposited on a hydrogen-terminated diamond by thermal oxidation of Sn. The X-ray photoelectron spectroscopy result implies partial oxidation of Sn film on the diamond surface. The leakage current and capacitance–voltage properties of… read more here.
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Published in 2024 at "Materials"
DOI: 10.3390/ma18010112
Abstract: With the development of diamond technology, its application in the field of electronics has become a new research hotspot. Hydrogen-terminated diamond has the electrical properties of P-type conduction due to the formation of two-dimensional hole… read more here.