Modeling and analysis of I-V hysteresis behaviors caused by defects in tin perovskite thin films
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DOI: 10.1063/1.5050557
Abstract: We analyzed the I-V hysteresis behaviors of tin perovskite (MASnI3, MA: CH3NH3) thin films using impedance spectroscopy coupled with charge modulation spectroscopy (CMS). The capacitance-voltage (C-V) characteristics of the ITO/MASnI3/Al device showed hysteresis behaviors, in… read more here.
Keywords: thin films; hysteresis; spectroscopy; tin perovskite ... See more keywords