Stacking n-type layers: Effective route towards stable, efficient and hysteresis-free planar perovskite solar cells
Sign Up to like & getrecommendations! Published in 2018 at "Nano Energy"
DOI: 10.1016/j.nanoen.2017.11.069
Abstract: Abstract Perovskite solar cell (PSC) has drawn widespread concern for its high efficiency and facile low-temperature solution fabrication, promising for the alternative low-cost photovoltaic energy. However, before commercializing, the problems regarding to the environmental stability… read more here.
Keywords: stacking type; hysteresis free; perovskite solar; type layers ... See more keywords
Interface Engineering in Chip-Scale GaN Optical Devices for Near-Hysteresis-Free Hydraulic Pressure Sensing.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c09291
Abstract: In this work, a compact, near-hysteresis-free hydraulic pressure sensor is presented through interface engineering in a GaN chip-scale optical device. The sensor consists of a monolithic GaN-on-sapphire device responsible for light emission and detection and… read more here.
Keywords: pressure; interface engineering; near hysteresis; hysteresis free ... See more keywords
High-Performance and Hysteresis-Free Planar Solar Cells with PC71BM and C60 Composed Structure Prepared Irrespective of Humidity
Sign Up to like & getrecommendations! Published in 2017 at "ACS Sustainable Chemistry & Engineering"
DOI: 10.1021/acssuschemeng.7b01490
Abstract: Perovskite solar cells with excellent photovoltaic performance have drawn enormous attention in the past seven years. However, most perovskite films are processed in a glovebox to isolate oxygen and water, which hampers real applications. In… read more here.
Keywords: hysteresis free; irrespective humidity; performance; humidity ... See more keywords
Hysteresis-free MoS2 metal semiconductor field-effect transistors with van der Waals Schottky junction
Sign Up to like & getrecommendations! Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/abd2e8
Abstract: Hysteresis-free and steep subthreshold swing (SS) are essential for low-power reliable electronics. Herein, MoS2 metal semiconductor field-effect transistors are fabricated with GeSe/MoS2 van der Waals Schottky junction as a local gate, in which the rectification… read more here.
Keywords: semiconductor field; mos2 metal; hysteresis free; effect transistors ... See more keywords
Steep-Slope and Hysteresis-Free MoS2 Negative-Capacitance Transistors Using Single HfZrAlO Layer as Gate Dielectric
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12244352
Abstract: An effective way to reduce the power consumption of an integrated circuit is to introduce negative capacitance (NC) into the gate stack. Usually, negative-capacitance field-effect transistors (NCFETs) use both a negative-capacitance layer and a positive-capacitance… read more here.
Keywords: negative capacitance; using single; layer; gate ... See more keywords