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   Articles with "hzo" as a keyword



Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices

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recommendations! Published in 2020 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202002638

Abstract: Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallites coexist with grain boundaries between o-HZO and a residual paraelectric… read more here.

Keywords: blocking conducting; capping layers; hzo; grain boundaries ... See more keywords

Zirconium‐Rich Strategy in Ultrathin Hf0.5Zr0.5O2 toward Back‐End‐of‐Line‐Compatible Ferroelectric Random Access Memory

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recommendations! Published in 2025 at "Advanced Science"

DOI: 10.1002/advs.202509384

Abstract: HfO2‐based ferroelectric devices have garnered lots of attention in embedded memory due to its exceptional complementary metal oxide semiconductor (CMOS) compatibility as well as sub‐10 nm scalability. Nevertheless, challenges such as double remanent polarization (2Pr)… read more here.

Keywords: hzo; zirconium rich; back end; memory ... See more keywords

Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes

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recommendations! Published in 2024 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.202300798

Abstract: The well‐developed high‐k technologies ease the integration complexity for HfO2‐based ferroelectric (FE) devices in the complementary metal‐oxide semiconductor processes. Sputtered HfxZr(1‐x)O2 (HZO) FEs have proven their thermal compatibility in back‐end‐of‐line (BEOL) integration processes with high… read more here.

Keywords: hzo; bottom electrodes; oxygen content; bottom ... See more keywords

Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf0.5Zr0.5O2

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recommendations! Published in 2024 at "Rare Metals"

DOI: 10.1007/s12598-024-02674-0

Abstract: In this work, a conventional HfO2 gate dielectric layer is replaced with a 3-nm ferroelectric (Fe) HZO layer in the gate stacks of advanced fin field-effect transistors (FinFETs). Fe-induced characteristics, e.g., negative drain induced barrier… read more here.

Keywords: circuits based; hzo; field effect; fin field ... See more keywords

Herpes Zoster Ophthalmicus: Presentation, Complications, Treatment, and Prevention

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recommendations! Published in 2024 at "Infectious Diseases and Therapy"

DOI: 10.1007/s40121-024-00990-7

Abstract: Herpes zoster (HZ) is caused by reactivation of latent infection of varicella zoster virus (VZV) in sensory (cranial, dorsal root) ganglia. Major risk factors for HZ are increasing age and immunosuppression. HZ ophthalmicus (HZO) is… read more here.

Keywords: hzo; treatment; zoster ophthalmicus; herpes zoster ... See more keywords

Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si

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recommendations! Published in 2017 at "Microelectronic Engineering"

DOI: 10.1016/j.mee.2017.05.028

Abstract: In this work, we report on the electron transport properties of ultrathin (~2.5nm) ferroelectric polycrystalline Hf0.5Zr0.5O2 (HZO) films grown by the Atomic Layer Deposition (ALD) technique directly on the highly doped Si substrate. On the… read more here.

Keywords: electron transport; transport; hzo; ultrathin ferroelectric ... See more keywords

Rational Design of Antifouling Polymeric Nanocomposite for Sustainable Fluoride Removal from NOM-Rich Water.

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recommendations! Published in 2017 at "Environmental science & technology"

DOI: 10.1021/acs.est.7b04164

Abstract: The presence of natural organic matter (NOM) exerts adverse effects on adsorptive removal of various pollutants including fluoride from water. Herein, we designed a novel nanocomposite adsorbent for preferable and sustainable defluoridation from NOM-rich water.… read more here.

Keywords: water; hzo hca; hzo; nom rich ... See more keywords

Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory.

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recommendations! Published in 2022 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.2c15369

Abstract: The comparatively high coercive field in Hf0.5Zr0.5O2 (HZO) and other HfO2-based ferroelectric thin films leads to two critical challenges for their application in embedded ferroelectric memory: high operating voltage due to a large thickness-field product… read more here.

Keywords: thickness scaling; operating voltage; voltage; memory ... See more keywords

Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealing

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recommendations! Published in 2024 at "ACS Applied Materials & Interfaces"

DOI: 10.1021/acsami.4c10002

Abstract: Nonvolatile memory devices based on ferroelectric HfxZr1–xO2 (HZO) show great promise for back-end integrable storage and for neuromorphic accelerators, but their adoption is held back by the inability to scale down the HZO thickness without… read more here.

Keywords: laser; back end; hzo; ultrathin hfo2 ... See more keywords

Interfacial Layer Engineering in Zr-Doped HfO2 Ferroelectric Films: Trade-Off Between Polarization Enhancement and Reliability.

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recommendations! Published in 2025 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.5c12145

Abstract: HfO2-based ferroelectric materials have attracted significant attention for next-generation nonvolatile memory applications due to their superior ferroelectric properties and CMOS compatibility. In this study, Zr-doped HfO2 (HZO) films with various engineered interfacial layers [Al2O3 (Al-HZO),… read more here.

Keywords: field; hzo; interfacial layer; polarization ... See more keywords

Bias dependent band alignment in Ga2O3 ferroelectric interface by operando HAXPES

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recommendations! Published in 2025 at "Scientific Reports"

DOI: 10.1038/s41598-025-90555-6

Abstract: We present a fundamental study of the band alignment at the interface of HfZrO4 (HZO) with Ge-doped Ga2O3. Ge is an alternative n-type dopant for the wide band gap Ga2O3 due to its shallow donor… read more here.

Keywords: hzo; ga2o3; band; band alignment ... See more keywords