Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202002638
Abstract: Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallites coexist with grain boundaries between o-HZO and a residual paraelectric… read more here.
Keywords: blocking conducting; capping layers; hzo; grain boundaries ... See more keywords
Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si
Sign Up to like & getrecommendations! Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.05.028
Abstract: In this work, we report on the electron transport properties of ultrathin (~2.5nm) ferroelectric polycrystalline Hf0.5Zr0.5O2 (HZO) films grown by the Atomic Layer Deposition (ALD) technique directly on the highly doped Si substrate. On the… read more here.
Keywords: electron transport; transport; hzo; ultrathin ferroelectric ... See more keywords
Rational Design of Antifouling Polymeric Nanocomposite for Sustainable Fluoride Removal from NOM-Rich Water.
Sign Up to like & getrecommendations! Published in 2017 at "Environmental science & technology"
DOI: 10.1021/acs.est.7b04164
Abstract: The presence of natural organic matter (NOM) exerts adverse effects on adsorptive removal of various pollutants including fluoride from water. Herein, we designed a novel nanocomposite adsorbent for preferable and sustainable defluoridation from NOM-rich water.… read more here.
Keywords: water; hzo hca; hzo; nom rich ... See more keywords
Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c15369
Abstract: The comparatively high coercive field in Hf0.5Zr0.5O2 (HZO) and other HfO2-based ferroelectric thin films leads to two critical challenges for their application in embedded ferroelectric memory: high operating voltage due to a large thickness-field product… read more here.
Keywords: thickness scaling; operating voltage; voltage; memory ... See more keywords
Enhanced piezoelectricity of thin film hafnia-zirconia (HZO) by inorganic flexible substrates
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5031134
Abstract: Hf0.5Zr0.5O2 (HZO) films are grown on rigid glass and flexible polyimide substrates using non-rapid thermal annealing. Films are comparatively investigated using macroscopic and local probe-based approaches to characterize their ferroelectric and piezoelectric properties. The polarization-electric… read more here.
Keywords: flexible substrates; thin films; grown rigid; hzo ... See more keywords
Spontaneous polarization enhancement in ferroelectric Hf0.5Zr0.5O2 using atomic oxygen defects engineering: An ab initio study
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5115293
Abstract: Oxygen defect impacts on ferroelectricity in Hf0.5Zr0.5O2 (HZO) are systematically studied on the basis of first-principles calculations. Importantly, the oxygen vacancy and Frenkel pair could enhance the spontaneous polarization (Ps) by an average of 14.5%,… read more here.
Keywords: oxygen; spontaneous polarization; hzo; polarization ... See more keywords
Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate
Sign Up to like & getrecommendations! Published in 2019 at "AIP Advances"
DOI: 10.1063/1.5124402
Abstract: Ferroelectric HfxZryOz (HZO) with an average polarization switching window of 32 µC/cm2 was demonstrated on a Si substrate with a ZrO2 interfacial layer (IL). It is suggested that the ZrO2 IL below HZO crystallizes in… read more here.
Keywords: zro2 interfacial; ferroelectric hfxzryoz; layer; hzo ... See more keywords
Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0030856
Abstract: In this study, we investigate the effects of various electrodes on the ferroelectric properties of ultrathin HfZrOx (HZO) films. The ferroelectric polarization is totally suppressed in the HZO films with TiN and W bottom electrodes… read more here.
Keywords: ultrathin hfzrox; hzo films; property ultrathin; ferroelectric property ... See more keywords
Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/acad0a
Abstract: Hf0.5Zr0.5O2 (HZO) thin films are promising candidates for non-volatile memory and other related applications due to their demonstrated ferroelectricity at the nanoscale and compatibility with Si processing. However, one reason that HZO has not been… read more here.
Keywords: 5zr0 5o2; hf0 5zr0; tin; top bottom ... See more keywords
Neurotrophic Keratopathy After Herpes Zoster Ophthalmicus
Sign Up to like & getrecommendations! Published in 2022 at "Cornea"
DOI: 10.1097/ico.0000000000003003
Abstract: Purpose: The aim of this study was to describe risk factors for neurotrophic keratopathy (NK) after herpes zoster ophthalmicus (HZO). Methods: This study was a retrospective review of all patients seen at the Auckland District… read more here.
Keywords: zoster ophthalmicus; neurotrophic keratopathy; keratopathy herpes; herpes zoster ... See more keywords
Insights into the atomic structure of the interface of ferroelectric Hf0.5Zr0.5O2 grown epitaxially on La2/3Sr1/3MnO3
Sign Up to like & getrecommendations! Published in 2021 at "Physical Review Materials"
DOI: 10.1103/physrevmaterials.5.074410
Abstract: Epitaxial growth of ${\mathrm{Hf}}_{0.5}{\mathrm{Zr}}_{0.5}{\mathrm{O}}_{2}$ (HZO) thin films allows for the stabilization of the metastable orthorhombic phase with robust ferroelectric properties. So far, the ferroelectric phase is most commonly stabilized on perovskite substrates upon insertion of… read more here.
Keywords: atomic structure; hzo; mathrm; interface ... See more keywords