Characterization of AlN and AlScN film ICP etching for micro/nano fabrication
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DOI: 10.1016/j.mee.2021.111530
Abstract: Abstract We investigate the inductively coupled plasma (ICP) etching characteristics of (0002) Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al0.94Sc0.06N) piezoelectric thin films as well as the implementation on piezoelectric lamb wave resonators. A profile… read more here.
Keywords: icp etching; aln alscn; characterization aln; alscn film ... See more keywords
The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl2-Based Plasma for Integrated Optics Applications
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DOI: 10.3390/mi12121535
Abstract: Chlorine processes are widely used for the formation of waveguide structures in InP-based optoelectronics. Traditionally, ICP etching of InP in a Cl2-based plasma requires substrate temperatures in the range of 150–200 °C. This condition is… read more here.
Keywords: icp etching; optics; inp ingaasp; based plasma ... See more keywords