Equivalent circuit model of GaN HEMT with non-ideal effects considered through genetic algorithm
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DOI: 10.1088/1361-6463/acdadd
Abstract: This work proposes a semi-physical equivalent circuit model for GaN-based high electron mobility transistor (GaN HEMT), taking into account the non-ideal effects of both current source and resistance-capacitance components. The current source model is built… read more here.
Keywords: non ideal; equivalent circuit; circuit model; gan hemt ... See more keywords