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Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113800
Abstract: Abstract The operating temperature of power semiconductor devices is one of the limiting factors that affects the overall reliability performance of the power electronic system. Therefore, an accurate thermal loading estimation is required for realistic…
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Keywords:
module;
igbt;
power;
reliability ... See more keywords
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Published in 2019 at "Electronics Letters"
DOI: 10.1049/el.2019.2803
Abstract: A carrier-storage-enhanced superjunction (SJ) insulated gate bipolar transistor (IGBT) with n-Si and p-3C-SiC pillars (Si/SiC SJ IGBT) is studied. At the on-state, the n-Si/p-SiC heterojunction acts as a barrier for holes in the n-Si pillar,…
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Keywords:
igbt;
carrier storage;
enhanced superjunction;
storage enhanced ... See more keywords
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Published in 2020 at "Electric Power Components and Systems"
DOI: 10.1080/15325008.2020.1793835
Abstract: Abstract The main objective of this paper is to propose a method that contributes to the automatic diagnosis of the IGBT open-circuit fault of an inverter for detecting and localizing the fault using the stator…
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Keywords:
open circuit;
circuit fault;
fault;
igbt open ... See more keywords
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Published in 2019 at "COMPEL - The international journal for computation and mathematics in electrical and electronic engineering"
DOI: 10.1108/compel-04-2018-0181
Abstract: Purpose This paper aims to analyze and investigate the performance of an improved fault detection and identification (FDI) method based on multiple criteria, applied to six-switch three-phase inverter (SSTPI)-fed induction motor (IM) drives under both…
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Keywords:
multiple open;
igbt;
method;
single multiple ... See more keywords
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Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.3017949
Abstract: The remaining useful life (RUL) prediction is essential for the IGBT module when setting a reasonable maintenance schedule and improving IGBT reliability by design. In this article, an RUL prediction method is proposed based on…
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Keywords:
useful life;
igbt;
precursor;
prediction ... See more keywords
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Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2964879
Abstract: A novel insulated gate bipolar transistor modulated by a high- ${k}$ dielectric (HK-IGBT) is presented. By laterally alternating the HK-pillar and N-drift, HK-IGBT can offer a quick and complete depletion to the drift region during…
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Keywords:
igbt;
novel igbt;
turn loss;
high dielectric ... See more keywords
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Published in 2018 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2017.2740856
Abstract: Insulated gate bipolar transistor (IGBT) has been widely used in diverse power electronics systems. As IGBT is one of the most vulnerable components in power electronics converter, remaining useful life (RUL) estimation of this switch…
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Keywords:
estimation;
rul estimation;
particle;
remaining useful ... See more keywords
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3
Published in 2023 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2022.3172768
Abstract: Condition monitoring of insulated gate bipolar transistor (IGBT) modules is an effective way to improve the transient performance and reliability of modular multilevel converters (MMC). This article proposes a novel bond wire failure monitoring method…
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Keywords:
voltage;
igbt;
multichip igbt;
wire ... See more keywords
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1
Published in 2017 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2016.2532332
Abstract: Insulated-gate bipolar transistors (IGBTs) operated in short circuit become instable in certain driving and load conditions. The induced oscillations can compromise robustness and reliability of the entire power converter. The stability of the device inserted…
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Keywords:
igbt;
circuit;
short circuit;
input impedance ... See more keywords
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Published in 2019 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2018.2856777
Abstract: This paper presents a new insulated gate bipolar transistor (IGBT) over-current detection method based on the analysis of the gate voltage waveform. The IGBT's gate voltage turn-on transient pattern is analyzed for the detection of…
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Keywords:
voltage;
igbt;
current detection;
gate voltage ... See more keywords
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Published in 2021 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2020.3005940
Abstract: Along with the increasing maturity for the material and process of the wide bandgap semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing the top level of power devices could be fabricated by…
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Keywords:
sic igbt;
igbt;
models fabrications;
review sic ... See more keywords