Sign Up to like & get
recommendations!
1
Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113800
Abstract: Abstract The operating temperature of power semiconductor devices is one of the limiting factors that affects the overall reliability performance of the power electronic system. Therefore, an accurate thermal loading estimation is required for realistic…
read more here.
Keywords:
module;
igbt;
power;
reliability ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2019 at "Electronics Letters"
DOI: 10.1049/el.2019.2803
Abstract: A carrier-storage-enhanced superjunction (SJ) insulated gate bipolar transistor (IGBT) with n-Si and p-3C-SiC pillars (Si/SiC SJ IGBT) is studied. At the on-state, the n-Si/p-SiC heterojunction acts as a barrier for holes in the n-Si pillar,…
read more here.
Keywords:
igbt;
carrier storage;
enhanced superjunction;
storage enhanced ... See more keywords
Sign Up to like & get
recommendations!
0
Published in 2025 at "IET Electric Power Applications"
DOI: 10.1049/elp2.70134
Abstract: The rapid development of DC power systems in applications such as electric aircraft and microgrids has highlighted the need for high‐performance DC short‐circuit protection. Solid‐state circuit breakers (SSCBs), utilising power semiconductor devices, offer superior performance…
read more here.
Keywords:
circuit;
sic mosfet;
gate;
igbt ... See more keywords
Photo from wikipedia
Sign Up to like & get
recommendations!
2
Published in 2020 at "Electric Power Components and Systems"
DOI: 10.1080/15325008.2020.1793835
Abstract: Abstract The main objective of this paper is to propose a method that contributes to the automatic diagnosis of the IGBT open-circuit fault of an inverter for detecting and localizing the fault using the stator…
read more here.
Keywords:
open circuit;
circuit fault;
fault;
igbt open ... See more keywords
Sign Up to like & get
recommendations!
0
Published in 2024 at "Smart Materials and Structures"
DOI: 10.1088/1361-665x/ad7659
Abstract: An effective approach is proposed to evaluate the service life reliability of a multi-physics coupling structure of an insulated gate bipolar transistor (IGBT) module. The node-based smoothed finite element method with stabilization terms is firstly…
read more here.
Keywords:
life reliability;
igbt;
service;
service life ... See more keywords
Sign Up to like & get
recommendations!
0
Published in 2024 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/45/5/052301
Abstract: There are challenges to the reliability evaluation for insulated gate bipolar transistors (IGBT) on electric vehicles, such as junction temperature measurement, computational and storage resources. In this paper, a junction temperature estimation approach based on…
read more here.
Keywords:
temperature;
vehicle;
reliability evaluation;
igbt ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2019 at "COMPEL - The international journal for computation and mathematics in electrical and electronic engineering"
DOI: 10.1108/compel-04-2018-0181
Abstract: Purpose This paper aims to analyze and investigate the performance of an improved fault detection and identification (FDI) method based on multiple criteria, applied to six-switch three-phase inverter (SSTPI)-fed induction motor (IM) drives under both…
read more here.
Keywords:
multiple open;
igbt;
method;
single multiple ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.3017949
Abstract: The remaining useful life (RUL) prediction is essential for the IGBT module when setting a reasonable maintenance schedule and improving IGBT reliability by design. In this article, an RUL prediction method is proposed based on…
read more here.
Keywords:
useful life;
igbt;
precursor;
prediction ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2964879
Abstract: A novel insulated gate bipolar transistor modulated by a high- ${k}$ dielectric (HK-IGBT) is presented. By laterally alternating the HK-pillar and N-drift, HK-IGBT can offer a quick and complete depletion to the drift region during…
read more here.
Keywords:
igbt;
novel igbt;
turn loss;
high dielectric ... See more keywords
Sign Up to like & get
recommendations!
0
Published in 2018 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2017.2740856
Abstract: Insulated gate bipolar transistor (IGBT) has been widely used in diverse power electronics systems. As IGBT is one of the most vulnerable components in power electronics converter, remaining useful life (RUL) estimation of this switch…
read more here.
Keywords:
estimation;
rul estimation;
particle;
remaining useful ... See more keywords
Sign Up to like & get
recommendations!
3
Published in 2023 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2022.3172768
Abstract: Condition monitoring of insulated gate bipolar transistor (IGBT) modules is an effective way to improve the transient performance and reliability of modular multilevel converters (MMC). This article proposes a novel bond wire failure monitoring method…
read more here.
Keywords:
voltage;
igbt;
multichip igbt;
wire ... See more keywords