Monitoring Void Fatigue in Solder Layer of IGBT Module Based on Common Mode Interference Spectrum
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Components, Packaging and Manufacturing Technology"
DOI: 10.1109/tcpmt.2023.3342617
Abstract: Solder voids are one of the most important aging forms of insulated gate bipolar transistor (IGBT) modules. This article presents an online monitoring method of void fatigue in the solder layer of an IGBT module… read more here.
Keywords: igbt module; solder; solder layer;
Thermal Management of IGBT Module in the Wind Power Converter Based on the ROI
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2021.3108729
Abstract: Insulated gate bipolar transistor (IGBT) module is one of the most prone-to-fail components in the wind power converter (WPC). The reduction of the junction temperature swing by thermal management can improve the reliability of a… read more here.
Keywords: thermal management; management; igbt module; wind power ... See more keywords
A New Output Current Measurement Method With Tiny PCB Sensors Capable of Being Embedded in an IGBT Module
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2016.2606111
Abstract: This paper proposes a new output current measuring method using tiny printed-circuit-board (PCB) current sensors. The method will make it possible to install the PCB current sensors in an insulated-gate bipolar transistor (IGBT) module. The… read more here.
Keywords: igbt module; method; pcb; new output ... See more keywords
Improving Short-Circuit Withstand Capability by Targeted Optimization Package for Press-Pack IGBT Module
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2024.3431077
Abstract: In this article, an electrical–thermal–mechanical (ETM) multiphysics transient finite-element (FE) model is proposed for the press-pack insulated gate bipolar transistor (PP-IGBT) module, and a targeted optimization package (TOP) is designed to enhance the short-circuit withstand… read more here.
Keywords: igbt module; targeted optimization; igbt; short circuit ... See more keywords
Research on lifetime distribution and reliability of IGBT module based on accelerated life test and K-S test
Sign Up to like & getrecommendations! Published in 2019 at "International Journal of Engineering Systems Modelling and Simulation"
DOI: 10.1504/ijesms.2019.10020262
Abstract: To realise lifetime distribution and reliability analysis of IGBT, a new research method for IGBT module lifetime was proposed based on double stress accelerated life test and K-S test. In this method, the lifetime of… read more here.
Keywords: accelerated life; test; igbt module; life ... See more keywords
Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation
Sign Up to like & getrecommendations! Published in 2023 at "Materials"
DOI: 10.3390/ma16093504
Abstract: The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit,… read more here.
Keywords: solder layer; igbt module; heat; solder ... See more keywords
Reliability Simulation of IGBT Module with Different Solders Based on the Finite Element Method
Sign Up to like & getrecommendations! Published in 2024 at "Metals"
DOI: 10.3390/met14101141
Abstract: The interconnecting solder is a key control factor for the reliability of electronic power packaging because it highly affects the junction temperature of insulated-gate bipolar transistor (IGBT) modules and is prone to plasticity, creep, and… read more here.
Keywords: igbt module; life; solder; reliability ... See more keywords
Heat Dissipation Characteristics of IGBT Module Based on Flow-Solid Coupling
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13040554
Abstract: With the increase of power level and integration in electric vehicle controllers, the heat flux of the key silicon-based IGBT (Insulated Gate Bipolar Transistor) device has reached its physical limit. At present, third-generation semiconductor devices… read more here.
Keywords: dissipation characteristics; igbt module; heat; heat dissipation ... See more keywords