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2
Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3144575
Abstract: In this study, cosimulation with Q3D and Simplorer were adopted to design a single-phase power stack with equal output current on three paralleled IGBT modules in high power application, therefore, the derating of total current…
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Keywords:
power stack;
current sharing;
igbt modules;
power ... See more keywords
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1
Published in 2019 at "IEEE Transactions on Industry Applications"
DOI: 10.1109/tia.2019.2934713
Abstract: In this article, a detailed hard switching behavior comparison between a 1700-V silicon carbide metal-oxide-semiconductor field-effect-transistor and a 1700-V silicon insulated-gate bipolar-transistor module was performed in an identical low inductance commutation circuit for comparable driving…
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Keywords:
mosfet igbt;
comparison 1700;
modules identical;
1700 sic ... See more keywords
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Published in 2023 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2022.3176284
Abstract: The junction temperature of the insulated gate bipolar transistor (IGBT) modules is a vital parameter for the reliability of the power electronic system. For effective thermal management, it is necessary to estimate junction temperature in…
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Keywords:
temperature;
temperature estimation;
igbt modules;
junction temperature ... See more keywords
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1
Published in 2018 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2017.2750328
Abstract: Wear-out condition monitoring of IGBT modules with failure mode separation gives some benefits. First, it allows proactive maintenance plans. Further, depending on the failure mode, different proactive control strategies can be applied to inverters in…
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Keywords:
failure modes;
igbt modules;
separation;
modules grid ... See more keywords