The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Engineering Materials"
DOI: 10.1002/adem.201901053
Abstract: Herein, solution‐processed indium gallium zinc oxide (IGZO) thin‐film transistor (TFT) is fabricated utilizing metal nitrates as precursors, and the impact of nitrate ions in different solvents on the performances of IGZO TFT is demonstrated. During… read more here.
Keywords: solution processed; indium gallium; igzo; film ... See more keywords
Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.05.188
Abstract: Abstract Carbon nanotubes (CNTs) and indium-gallium-zinc oxide (IGZO) have emerged as important materials for p-type and n-type thin-film transistors (TFTs), respectively, due to their high mobility, flexibility, and low fabrication temperature. However, fabricating sophisticated macroelectronic… read more here.
Keywords: carbon; thin film; process conditions; hybrid complementary ... See more keywords
Rectified Schottky diodes that use low-cost carbon paste/InGaZnO junctions
Sign Up to like & getrecommendations! Published in 2019 at "Organic Electronics"
DOI: 10.1016/j.orgel.2019.02.024
Abstract: Abstract IGZO-based Schottky diodes have applications in high-speed electronics. However, these devices generally require noble metals to form a Schottky contact, which was one of the problems for their early commercialization. This study demonstrates the… read more here.
Keywords: carbon paste; low cost; igzo; schottky diodes ... See more keywords
TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology
Sign Up to like & getrecommendations! Published in 2018 at "Surface and Coatings Technology"
DOI: 10.1016/j.surfcoat.2018.08.093
Abstract: Abstract We demonstrate the characteristics of a conductive-bridging random access memory (CBRAM) with Cu/TiW/InGaZnO/Ga2O3/Pt stack structure. The addition of a thin metal-oxide layer (4.5 nm-thick Ga2O3) in the bottom of the CBRAM device significantly increases the… read more here.
Keywords: cbram; igzo ga2o3; taos based; igzo ... See more keywords
Record-High-Performance Hydrogenated In-Ga-Zn-O Flexible Schottky Diodes.
Sign Up to like & getrecommendations! Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c12638
Abstract: High-performance In-Ga-Zn-O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 °C. IGZO:H was prepared by Ar + O2 + H2 sputtering. IGZO:H SDs on a glass… read more here.
Keywords: schottky barrier; schottky diodes; schottky; igzo ... See more keywords
Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors.
Sign Up to like & getrecommendations! Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c15017
Abstract: We investigated a facile fabrication method, which is an insertion of a carrier-induced interlayer (CII) between the oxygen-rich a-IGZO channel and the gate insulator to improve the electrical characteristics and stability of amorphous indium-gallium-zinc-oxide thin-film… read more here.
Keywords: oxygen; thin film; channel; stability ... See more keywords
Room-temperature ozone sensing capability of IGZO-decorated amorphous Ga2O3 films.
Sign Up to like & getrecommendations! Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.9b22400
Abstract: In present work, we report a room-temperature ozone sensor using InGaZnO (IGZO) decorated amorphous Ga2O3 (a-Ga2O3) thin films. The gas sensing tests demonstrate that the topmost IGZO modification can significantly promote the sensors' responsivity. Intriguingly,… read more here.
Keywords: temperature ozone; igzo; room temperature; ozone ... See more keywords
Probing the Efficacy of Large-Scale Nonporous IGZO for Visible-to-NIR Detection Capability: An Approach toward High-Performance Image Sensor Circuitry.
Sign Up to like & getrecommendations! Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c01773
Abstract: The technological ability to detect a wide spectrum range of illuminated visible-to-NIR is substantially improved for an amorphous metal oxide semiconductor, indium gallium zinc oxide (IGZO), without employing an additional photoabsorber. The fundamentally tuned morphology… read more here.
Keywords: scale; performance; visible nir; probing efficacy ... See more keywords
Origin of light instability in amorphous IGZO thin-film transistors and its suppression
Sign Up to like & getrecommendations! Published in 2021 at "Scientific Reports"
DOI: 10.1038/s41598-021-94078-8
Abstract: Radiating amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) with deep ultraviolet light (λ = 175 nm) is found to induce rigid negative threshold-voltage shift, as well as a subthreshold hump and an increase in subthreshold-voltage slope. These changes… read more here.
Keywords: amorphous igzo; thin film; film; igzo thin ... See more keywords
Self-biased wavelength selective photodetection in an n-IGZO/p-GeSe heterostructure by polarity flipping.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr01013e
Abstract: Transparent semiconductor oxides with two-dimensional (2D) heterostructures have been extensively studied as new materials for thin-film transistors and photosensors due to their remarkable photovoltaic characteristics, making them useful for newly developed optoelectronics. Here we demonstrate… read more here.
Keywords: igzo gese; wavelength; igzo; gese heterostructure ... See more keywords
Vacuum-free solution-based metallization (VSM) of a-IGZO using trimethylaluminium solution
Sign Up to like & getrecommendations! Published in 2022 at "RSC Advances"
DOI: 10.1039/d2ra00217e
Abstract: This research demonstrates a method to reduce the resistance of amorphous indium–gallium–zinc–oxide (a-IGZO) using a “vacuum-free solution-based metallization” (VSM) process, which revolutionizes the metallization process thanks to its simplicity, by simply dipping the a-IGZO into… read more here.
Keywords: vacuum free; igzo using; free solution; solution ... See more keywords