TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology
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DOI: 10.1016/j.surfcoat.2018.08.093
Abstract: Abstract We demonstrate the characteristics of a conductive-bridging random access memory (CBRAM) with Cu/TiW/InGaZnO/Ga2O3/Pt stack structure. The addition of a thin metal-oxide layer (4.5 nm-thick Ga2O3) in the bottom of the CBRAM device significantly increases the… read more here.
Keywords: cbram; igzo ga2o3; taos based; igzo ... See more keywords