Marked improvement in reliability of 150 °C-processed In–Ga–Zn–O (IGZO) thin-film transistors by applying hydrogenated IGZO as a channel material
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Express"
DOI: 10.35848/1882-0786/ab9478
Abstract: A marked improvement in the reliability of high-mobility In–Ga–Zn–O thin-film transistor (IGZO TFT) is presented after 150 °C annealing by applying hydrogenated IGZO (IGZO:H) as a channel. To enhance field-effect mobility (μFE), the atomic ratio… read more here.
Keywords: improvement reliability; marked improvement; thin film; reliability ... See more keywords