Reliability analysis under bias stress and elevated temperature of dual-gate IGZO TFT
Sign Up to like & getrecommendations! Published in 2024 at "AIP Advances"
DOI: 10.1063/5.0232559
Abstract: Indium–gallium–zinc oxide (IGZO) as a star material has been broadly applied in multiple functional devices, including planar displays, flexible electronic devices, and photoelectronics. In recent years, the development of artificial intelligence and great data also… read more here.
Keywords: bias stress; dual gate; igzo; igzo tft ... See more keywords
Marked improvement in reliability of 150 °C-processed In–Ga–Zn–O (IGZO) thin-film transistors by applying hydrogenated IGZO as a channel material
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DOI: 10.35848/1882-0786/ab9478
Abstract: A marked improvement in the reliability of high-mobility In–Ga–Zn–O thin-film transistor (IGZO TFT) is presented after 150 °C annealing by applying hydrogenated IGZO (IGZO:H) as a channel. To enhance field-effect mobility (μFE), the atomic ratio… read more here.
Keywords: improvement reliability; marked improvement; thin film; reliability ... See more keywords