Sign Up to like & get
recommendations!
0
Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.8b02433
Abstract: We suggest thermal treatment with static magnetic fields (SMFs) or rotating magnetic fields (RMFs) as a new technique for the activation of indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). Magnetic interactions between metal atoms in IGZO…
read more here.
Keywords:
magnetic fields;
igzo tfts;
low temperature;
thin film ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2021 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ac45b0
Abstract: In recent years, low power electronic devices have attracted increasing interest. Here, flexible thin-film transistors (TFTs) with In–Ga–Zn–O (IGZO) as the semiconductor channel material were fabricated on polyethylene terephthalate substrates. The device exhibits good electrical…
read more here.
Keywords:
low power;
electric modulated;
physics;
igzo tfts ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2801025
Abstract: A core scheme including dc and capacitance models of amorphous indium gallium zinc oxide thin-film transistors is presented based on terms of surface potential. Due to the intrinsic physical fact, carrier degeneracy is taken into…
read more here.
Keywords:
igzo tfts;
compact model;
model;
core compact ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3026613
Abstract: Amongst the new materials studied for the fabrication of high-performance flexible thin-film transistors (TFTs), amorphous indium-gallium-zinc-oxide (a-IGZO) exhibits a combination of advantages that enables its application in commercial electronics. Hence, it is crucial to understand…
read more here.
Keywords:
sub sub;
sub;
passivated unpassivated;
igzo tfts ... See more keywords
Sign Up to like & get
recommendations!
0
Published in 2021 at "Applied Sciences"
DOI: 10.3390/app11125501
Abstract: A highly reliable reverse-trapezoid-structured polydimethylsiloxane (PDMS) is demonstrated to achieve mechanically enhanced amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistors (TFTs) for skin-compatible electronics. Finite element analysis (FEA) simulation reveals that the stress within a-IGZO TFTs can be…
read more here.
Keywords:
stress released;
thin film;
igzo tfts;
skin compatible ... See more keywords