Origin of light instability in amorphous IGZO thin-film transistors and its suppression
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DOI: 10.1038/s41598-021-94078-8
Abstract: Radiating amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) with deep ultraviolet light (λ = 175 nm) is found to induce rigid negative threshold-voltage shift, as well as a subthreshold hump and an increase in subthreshold-voltage slope. These changes… read more here.
Keywords: amorphous igzo; thin film; film; igzo thin ... See more keywords