Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores.
Sign Up to like & getrecommendations! Published in 2018 at "Nano letters"
DOI: 10.1021/acs.nanolett.8b02760
Abstract: The integration of optically active III-V and electronic-suitable IV materials on the same nanowire could provide a great potential for the combination of photonics and electronics in the nanoscale. In this Letter, we demonstrate the… read more here.
Keywords: iii nanowires; hybrid iii; epitaxy gaas; high quality ... See more keywords
III–V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber
Sign Up to like & getrecommendations! Published in 2021 at "Scientific Reports"
DOI: 10.1038/s41598-021-93398-z
Abstract: Integration of functional infrared photodetectors on silicon platforms has been gaining attention for diverse applications in the fields of imaging and sensing. Although III–V semiconductor is a promising candidate for infrared photodetectors on silicon, the… read more here.
Keywords: iii nanowires; meta absorber; nanowires silicon; plasmonic photonic ... See more keywords
Modeling the Radial Growth of Self-Catalyzed III-V Nanowires
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12101698
Abstract: A new model for the radial growth of self-catalyzed III-V nanowires on different substrates is presented, which describes the nanowire morphological evolution without any free parameters. The model takes into account the re-emission of group… read more here.
Keywords: catalyzed iii; growth self; growth; self catalyzed ... See more keywords
Criterion for Selective Area Growth of III-V Nanowires
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DOI: 10.3390/nano12203698
Abstract: A model for the nucleation of vertical or planar III-V nanowires (NWs) in selective area growth (SAG) on masked substrates with regular arrays of openings is developed. The optimal SAG zone, with NW nucleation within… read more here.
Keywords: iii; iii nanowires; area growth; selective area ... See more keywords