Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes based on III-Nitride Semiconductors.
Sign Up to like & getrecommendations! Published in 2019 at "Advanced materials"
DOI: 10.1002/adma.201904354
Abstract: In the last two decades, remarkable progress has been achieved in the field of optoelectronic devices based on III-nitride semiconductors. In terms of photonics applications in the visible-UV spectral range, III-nitrides are one of the… read more here.
Keywords: iii nitride; blind avalanche; avalanche; nitride semiconductors ... See more keywords
2D III-Nitride Materials: Properties, Growth, and Applications.
Sign Up to like & getrecommendations! Published in 2021 at "Advanced materials"
DOI: 10.1002/adma.202006761
Abstract: 2D III-nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III-nitride materials can be applied in various fields,… read more here.
Keywords: iii nitride; materials properties; nitride materials; properties growth ... See more keywords
Electron-Beam-Driven III-Nitride Plasmonic Nanolasers in the Deep-UV and Visible Region.
Sign Up to like & getrecommendations! Published in 2019 at "Small"
DOI: 10.1002/smll.201906205
Abstract: Plasmonic nanolasers based on wide bandgap semiconductors are presently attracting immense research interests due to the breaking in light diffraction limit and subwavelength mode operation with fast dynamics. However, these plasmonic nanolasers have so far… read more here.
Keywords: plasmonic nanolasers; iii nitride; electron beam; region ... See more keywords
Signature of the ideality factor in III-nitride multi quantum well light emitting diodes
Sign Up to like & getrecommendations! Published in 2017 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-017-1264-4
Abstract: The ideality factor in recent III-nitride light emitting diodes (LED) is expected to approach values close to $$\eta \approx 1$$η≈1 near the maximum of the internal quantum efficiency (IQE) because the bimolecular recombination dominates there.… read more here.
Keywords: iii nitride; quantum; ideality factor; light emitting ... See more keywords
Strain effect on the electronic properties of III-nitride nanosheets: Ab-initio study
Sign Up to like & getrecommendations! Published in 2018 at "Science China Technological Sciences"
DOI: 10.1007/s11431-017-9177-1
Abstract: In this study the structural and electronic properties of III-nitride monolayers XN (X=B, Al, Ga and In) under different percentages of homogeneous and shear strain are investigated using the full potential linearized augmented plane wave… read more here.
Keywords: strain; iii nitride; electronic properties; band gap ... See more keywords
Thermodynamics Models for V-pit Nucleation and Growth in III-Nitride on Silicon
Sign Up to like & getrecommendations! Published in 2020 at "JOM"
DOI: 10.1007/s11837-020-04421-z
Abstract: Silicon and sapphire are common substrates for AlN, InGaN, and GaN thin films in several applications such as photovoltaic and light-embedded diodes. Threading dislocations are generated at interfaces between III-nitride (III-N) layers and these substrates… read more here.
Keywords: iii nitride; nucleation growth; pit nucleation; thermodynamics ... See more keywords
Semipolar (202̅1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.11.058
Abstract: Abstract P-down LEDs (PDLEDs) have the potential to open up new design schemes for III-nitride LEDs compared to conventional n-down LEDs (NDLEDs). For light emitters operating above 480 nm, the PDLED design enables the epitaxial advantages… read more here.
Keywords: iii nitride; memory effect; situ anneal; nitride leds ... See more keywords
Doping of III-nitride materials
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2016.11.006
Abstract: Abstract In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n -type and p -type doping… read more here.
Keywords: doping iii; iii nitride; nitride materials;
Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111).
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c23381
Abstract: Monolithic integration of wurtzite III-nitrides with nonpolar silicon (Si), the two most-produced semiconductor materials, is essential and critical for a broad range of applications in electronics, optoelectronics, quantum photonics, and renewable energy. To date, however,… read more here.
Keywords: iii nitride; lattice polarity; interfacial modulated; nitride heterostructures ... See more keywords
Simple Approach to Mitigate the Emission Wavelength Instability of III-Nitride μLED Arrays
Sign Up to like & getrecommendations! Published in 2022 at "ACS Photonics"
DOI: 10.1021/acsphotonics.2c00221
Abstract: III-nitride semiconductors and their heterojunctions exhibit intrinsic polarization due to the asymmetry of their wurtzite structure, which determines all the fundamental properties of III-nitride optoelectronics. The intrinsic polarization-induced quantum-confined Stark effect leads to an emission… read more here.
Keywords: color; emission wavelength; iii nitride; emission ... See more keywords
III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-06889-3
Abstract: The III-Nitride digital alloy (DA) is comprehensively studied as a short-period superlattice nanostructure consisting of ultra-thin III-Nitride epitaxial layers. By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are expected to have comparable optoelectronic… read more here.
Keywords: iii nitride; short period; alloy; digital alloy ... See more keywords