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Published in 2020 at "Chem"
DOI: 10.1016/j.chempr.2020.09.014
Abstract: Summary Group-III nitrides, touted as the next-generation semiconductors beyond Si, have brought dramatic changes to our everyday life over the past 3 decades. With revolutionary applications in LED lighting and power electronics, the use of…
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Keywords:
iii nitrides;
group iii;
nitrides catalyzed;
organic molecules ... See more keywords
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Published in 2018 at "Computational Materials Science"
DOI: 10.1016/j.commatsci.2018.07.060
Abstract: Abstract A structural investigation of (0 0 0 1) plane inversion domain boundaries (IDBs) in group III-nitrides (GaN, AlN and InN) has been carried out by means of Monte Carlo (MC) simulation of Stillinger-Weber empirical potential. Eight possible…
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Keywords:
inversion domain;
idbs;
type idbs;
iii nitrides ... See more keywords
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Published in 2024 at "Nano letters"
DOI: 10.1021/acs.nanolett.4c05065
Abstract: Semiconductor nanowires have become emerging photocatalysts in artificial photosynthesis processes for solar fuel production. For reduction reactions, semiconductor photocatalysts with high reducing powers are highly desirable, especially for chemicals that are extremely difficult to reduce.…
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Keywords:
photocatalysts high;
scandium iii;
semiconductor;
semiconductor photocatalysts ... See more keywords
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Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c15303
Abstract: Throughout the development of III-nitride electronic and optoelectronic devices, electrically interfacing III-nitride semiconductors and metal schemes has been a long-standing issue that determines the contact resistance and operation voltage, which are tightly associated with the…
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Keywords:
resistance;
engineering;
metal schemes;
metal ... See more keywords
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Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0145931
Abstract: Both two-dimensional (2D) transitional metal dichalcogenides (TMDs) and III–V semiconductors have been considered as potential platforms for quantum technology. While 2D TMDs exhibit a large exciton binding energy, and their quantum properties can be tailored…
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Keywords:
two dimensional;
iii nitrides;
quantum;
material synthesis ... See more keywords
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Published in 2022 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ac921f
Abstract: III-nitride semiconductor materials have excellent optoelectronic properties, mechanical properties, and chemical stability, which have important applications in the field of optoelectronics and microelectronics. Two-dimensional (2D) materials have been widely focused in recent years due to…
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Keywords:
two dimensional;
iii nitrides;
dimensional materials;
nitrides two ... See more keywords
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Published in 2020 at "Materials"
DOI: 10.3390/ma13194428
Abstract: III-nitride resonant cavity-enhanced Schottky barrier photodetectors were fabricated on 2 µm thick GaN templates by radio frequency plasma-assisted molecular beam epitaxy. The optical cavity was formed by a bottom distributed Bragg reflector based on 10…
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Keywords:
photodetector;
iii nitrides;
nitrides resonant;
resonant cavity ... See more keywords