Group-III Nitrides Catalyzed Transformations of Organic Molecules
Sign Up to like & getrecommendations! Published in 2020 at "Chem"
DOI: 10.1016/j.chempr.2020.09.014
Abstract: Summary Group-III nitrides, touted as the next-generation semiconductors beyond Si, have brought dramatic changes to our everyday life over the past 3 decades. With revolutionary applications in LED lighting and power electronics, the use of… read more here.
Keywords: iii nitrides; group iii; nitrides catalyzed; organic molecules ... See more keywords
Structural stability and electronic properties of the (0 0 0 1) inversion domain boundary in III-nitrides
Sign Up to like & getrecommendations! Published in 2018 at "Computational Materials Science"
DOI: 10.1016/j.commatsci.2018.07.060
Abstract: Abstract A structural investigation of (0 0 0 1) plane inversion domain boundaries (IDBs) in group III-nitrides (GaN, AlN and InN) has been carried out by means of Monte Carlo (MC) simulation of Stillinger-Weber empirical potential. Eight possible… read more here.
Keywords: inversion domain; idbs; type idbs; iii nitrides ... See more keywords
Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0145931
Abstract: Both two-dimensional (2D) transitional metal dichalcogenides (TMDs) and III–V semiconductors have been considered as potential platforms for quantum technology. While 2D TMDs exhibit a large exciton binding energy, and their quantum properties can be tailored… read more here.
Keywords: two dimensional; iii nitrides; quantum; material synthesis ... See more keywords
Epitaxy of III-nitrides on two-dimensional materials and its applications
Sign Up to like & getrecommendations! Published in 2022 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ac921f
Abstract: III-nitride semiconductor materials have excellent optoelectronic properties, mechanical properties, and chemical stability, which have important applications in the field of optoelectronics and microelectronics. Two-dimensional (2D) materials have been widely focused in recent years due to… read more here.
Keywords: two dimensional; iii nitrides; dimensional materials; nitrides two ... See more keywords
III-Nitrides Resonant Cavity Photodetector Devices
Sign Up to like & getrecommendations! Published in 2020 at "Materials"
DOI: 10.3390/ma13194428
Abstract: III-nitride resonant cavity-enhanced Schottky barrier photodetectors were fabricated on 2 µm thick GaN templates by radio frequency plasma-assisted molecular beam epitaxy. The optical cavity was formed by a bottom distributed Bragg reflector based on 10… read more here.
Keywords: photodetector; iii nitrides; nitrides resonant; resonant cavity ... See more keywords