Photonic Integration With Epitaxial III–V on Silicon
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of Selected Topics in Quantum Electronics"
DOI: 10.1109/jstqe.2018.2854542
Abstract: We present a brief overview of the various leading platforms for photonic integration. Subsequently, we consider the possibility of a photonic integrated circuit platform utilizing epitaxially grown III–V material on silicon—without the need for wafer… read more here.
Keywords: integration; epitaxial iii; photonic integration; integration epitaxial ... See more keywords
RoF System Based on an III-V-on-Silicon Transceiver With a Transfer-Printed PD
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Photonics Technology Letters"
DOI: 10.1109/lpt.2019.2917269
Abstract: A full-duplex analog radio-over-fiber (RoF) system using an ultra-compact integrated III-V-on-silicon transceiver is proposed. The downstream link transmitter is realized by a 15-GHz C-band silicon ring modulator, and the upstream link receiver is constructed based… read more here.
Keywords: transceiver; rof system; band; transfer ... See more keywords
Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication.
Sign Up to like & getrecommendations! Published in 2018 at "Optics express"
DOI: 10.1364/oe.26.007920
Abstract: We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by… read more here.
Keywords: external cavity; linewidth; iii silicon; silicon ... See more keywords
Low dark current III-V on silicon photodiodes by heteroepitaxy.
Sign Up to like & getrecommendations! Published in 2018 at "Optics express"
DOI: 10.1364/oe.26.013605
Abstract: Top-illuminated PIN and modified uni-traveling carrier (MUTC) photodiodes based on InGaAs/InAlAs/InP were epitaxially grown on Si templates. Photodiodes with 30-μm diameter have dark currents as low as 10 nA at 3 V corresponding to a… read more here.
Keywords: dark current; photodiodes heteroepitaxy; silicon photodiodes; current iii ... See more keywords
Back-side-on-BOX heterogeneously integrated III-V-on-silicon O-band discrete-mode lasers.
Sign Up to like & getrecommendations! Published in 2020 at "Optics express"
DOI: 10.1364/oe.412839
Abstract: We demonstrate foundry-fabricated O-band III-V-on-silicon discrete-mode lasers. The laser fabrication follows the back-side-on-buried-oxide laser integration process and is compatible with complex, multilayer, silicon-on-insulator based platforms. A series of devices were characterized, with the best devices… read more here.
Keywords: discrete mode; band; mode lasers; silicon ... See more keywords
Widely tunable 2.3 μm III-V-on-silicon Vernier lasers for broadband spectroscopic sensing
Sign Up to like & getrecommendations! Published in 2018 at "Photonics Research"
DOI: 10.1364/prj.6.000858
Abstract: Heterogeneously integrating III-V materials on silicon photonic integrated circuits has emerged as a promising approach to make advanced laser sources for optical communication and sensing applications. Tunable semiconductor lasers operating in the 2–2.5 μm range are… read more here.
Keywords: widely tunable; range; iii silicon; silicon vernier ... See more keywords