Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO
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DOI: 10.1063/1.4986180
Abstract: The effects of hole injection in amorphous indium-gallium-zinc-oxide (a-IGZO) are analyzed by means of first-principles calculations. The injection of holes in the valence band tail states leads to their capture as a polaron, with high… read more here.
Keywords: self trapping; illumination stress; negative bias; effects hole ... See more keywords