Impact of fin shapes and channel doping concentrations on the operation of junctionless transistors
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DOI: 10.1016/j.mee.2019.01.003
Abstract: Abstract The influence of variations in the Si fin shape on the electrical properties of junctionless transistors (JLTs) was investigated through two-dimensional Poisson equation numerical simulations at different doping concentrations. Stronger gate coupling in a… read more here.
Keywords: impact fin; doping concentrations; channel doping; junctionless transistors ... See more keywords