LAUSR

About LAUSR
Donate
Contact Us

Follow us:

You are not signed in:

Sign Up!


   Articles with "impact ionization" as a keyword



On calculating kerma, collision kerma and radiative yields.

Sign Up to like & get
recommendations! Published in 2019 at "Medical physics"

DOI: 10.1002/mp.13744

Abstract: PURPOSE To study the relationships between dose (D), kerma (K) and collision kerma (Kcol) in photon beams and to investigate total radiative yields for electrons and positrons as a function of energy. To do this… read more here.

Keywords: impact ionization; energy; collision kerma; radiative yields ... See more keywords
Photo from archive.org

Monte Carlo study of impact ionization in n-type InAs induced by intense ultrashort terahertz pulses

Sign Up to like & get
recommendations! Published in 2018 at "Optical and Quantum Electronics"

DOI: 10.1007/s11082-018-1528-7

Abstract: Electron impact ionization induced in n-type InAs by single-cycle pulses of picosecond and subpicosecond duration has been investigated by Monte Carlo method. It is established that the rate of generation of electron–hole pairs decreases with… read more here.

Keywords: impact ionization; type inas; study impact; carlo study ... See more keywords
Photo by jonathecreator from unsplash

Control of simultaneous effects of the temperature, indium composition and the impact ionization process on the performance of the InN/InxGa1-xN quantum dot solar cells

Sign Up to like & get
recommendations! Published in 2019 at "Opto-Electronics Review"

DOI: 10.1016/j.opelre.2019.01.004

Abstract: Abstract The impact ionization in semiconductor materials is a process that produces multiple charge carrier pairs from a single excitation. This mechanism constitutes a possible road to increase the efficiency of the p-n and p-i-n… read more here.

Keywords: solar cells; quantum dot; impact; process ... See more keywords
Photo from wikipedia

Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization

Sign Up to like & get
recommendations! Published in 2020 at "Solid-state Electronics"

DOI: 10.1016/j.sse.2019.107728

Abstract: Abstract A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while… read more here.

Keywords: impact ionization; hole impact; avalanche; avalanche photodiodes ... See more keywords
Photo by ldxcreative from unsplash

A steep-switching impact ionization-based threshold switching field-effect transistor.

Sign Up to like & get
recommendations! Published in 2023 at "Nanoscale"

DOI: 10.1039/d2nr06547a

Abstract: A steep switching device with a low subthreshold swing (SS) that overcomes the fundamental Boltzmann limit (kT/q) is required to efficiently process a continuously increasing amount of data. Recently, two-dimensional material-based impact ionization transistors with… read more here.

Keywords: ionization; ionization based; impact ionization; based threshold ... See more keywords

Electron-impact ionization cross sections of new SF6 replacements: A method of combining Binary-Encounter-Bethe (BEB) and Deutsch-Märk (DM) formalism

Sign Up to like & get
recommendations! Published in 2019 at "Journal of Applied Physics"

DOI: 10.1063/1.5119087

Abstract: Recently, much attention has been paid to some new carbon-fluoride gases, such as C2F4H2 (R134), C3F4H2 (HFO1234ze), C4F8, C4F7N, C5F10O, and C6F12O. All these gases present excellent dielectric strength and very low values of global… read more here.

Keywords: impact ionization; new sf6; formalism; ionization ... See more keywords

Impact ionization coefficients and critical electric field in GaN

Sign Up to like & get
recommendations! Published in 2021 at "Journal of Applied Physics"

DOI: 10.1063/5.0050793

Abstract: Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p–n junction diode are experimentally investigated at 223–373 K by novel photomultiplication measurements utilizing above- and below-bandgap illumination. The device has a non-punch-through one-side abrupt p–-n+ junction structure,… read more here.

Keywords: impact ionization; ionization coefficients; critical electric; electric field ... See more keywords

Impact of ionization equilibrium on electrokinetic flow of weak electrolytes in nanochannels.

Sign Up to like & get
recommendations! Published in 2018 at "Nanotechnology"

DOI: 10.1088/1361-6528/aac126

Abstract: Weak electrolyte transport in nanochannels or nanopores has been actively explored in recent experiments. In this paper, we establish a new electrokinetic model where the ionization balance effect of weak electrolytes is outlined, and performed… read more here.

Keywords: impact ionization; equilibrium electrokinetic; weak electrolytes; ionization equilibrium ... See more keywords

Phonon effects, impact ionization and power conversion in Mott photovoltaic systems

Sign Up to like & get
recommendations! Published in 2024 at "New Journal of Physics"

DOI: 10.1088/1367-2630/adb877

Abstract: We analyze the effect of acoustic phonons on the photocurrent and the spectral characteristics of a simplified photovoltaic setup made of Mott insulating layers between two metallic leads with a bias voltage applied between them.… read more here.

Keywords: phonon effects; mott; ionization; impact ionization ... See more keywords

Calculation of electron-impact ionization of various benzene derivatives

Sign Up to like & get
recommendations! Published in 2024 at "Physica Scripta"

DOI: 10.1088/1402-4896/ad640a

Abstract: Calculations of the electron-impact ionization cross-section of pyrene, anthracene, benzoyl chloride, benzophenone, and phthalonitrile are reported over a wide energy range. A comparison of theoretical models, viz. spherical complex optical potential (SCOP), pixel counting method… read more here.

Keywords: cross section; impact ionization; electron impact; ionization ... See more keywords

Fast high-power thyristors triggered in impact-ionization wave mode

Sign Up to like & get
recommendations! Published in 2019 at "Journal of Instrumentation"

DOI: 10.1088/1748-0221/14/10/p10006

Abstract: GTO-like thyristors 5STH-2045H0002 (4.5 kV, 18 kA/us) developed by ABB semiconductors are currently used at CERN in LHC Beam Dumping System (LBDS): high-power switches with high dI/dt capability and low turn-on delay time are required.… read more here.

Keywords: high power; thyristor; ionization; ionization wave ... See more keywords