On calculating kerma, collision kerma and radiative yields.
Sign Up to like & getrecommendations! Published in 2019 at "Medical physics"
DOI: 10.1002/mp.13744
Abstract: PURPOSE To study the relationships between dose (D), kerma (K) and collision kerma (Kcol) in photon beams and to investigate total radiative yields for electrons and positrons as a function of energy. To do this… read more here.
Keywords: impact ionization; energy; collision kerma; radiative yields ... See more keywords
Monte Carlo study of impact ionization in n-type InAs induced by intense ultrashort terahertz pulses
Sign Up to like & getrecommendations! Published in 2018 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-018-1528-7
Abstract: Electron impact ionization induced in n-type InAs by single-cycle pulses of picosecond and subpicosecond duration has been investigated by Monte Carlo method. It is established that the rate of generation of electron–hole pairs decreases with… read more here.
Keywords: impact ionization; type inas; study impact; carlo study ... See more keywords
Control of simultaneous effects of the temperature, indium composition and the impact ionization process on the performance of the InN/InxGa1-xN quantum dot solar cells
Sign Up to like & getrecommendations! Published in 2019 at "Opto-Electronics Review"
DOI: 10.1016/j.opelre.2019.01.004
Abstract: Abstract The impact ionization in semiconductor materials is a process that produces multiple charge carrier pairs from a single excitation. This mechanism constitutes a possible road to increase the efficiency of the p-n and p-i-n… read more here.
Keywords: solar cells; quantum dot; impact; process ... See more keywords
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization
Sign Up to like & getrecommendations! Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2019.107728
Abstract: Abstract A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while… read more here.
Keywords: impact ionization; hole impact; avalanche; avalanche photodiodes ... See more keywords
A steep-switching impact ionization-based threshold switching field-effect transistor.
Sign Up to like & getrecommendations! Published in 2023 at "Nanoscale"
DOI: 10.1039/d2nr06547a
Abstract: A steep switching device with a low subthreshold swing (SS) that overcomes the fundamental Boltzmann limit (kT/q) is required to efficiently process a continuously increasing amount of data. Recently, two-dimensional material-based impact ionization transistors with… read more here.
Keywords: ionization; ionization based; impact ionization; based threshold ... See more keywords
Electron-impact ionization cross sections of new SF6 replacements: A method of combining Binary-Encounter-Bethe (BEB) and Deutsch-Märk (DM) formalism
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5119087
Abstract: Recently, much attention has been paid to some new carbon-fluoride gases, such as C2F4H2 (R134), C3F4H2 (HFO1234ze), C4F8, C4F7N, C5F10O, and C6F12O. All these gases present excellent dielectric strength and very low values of global… read more here.
Keywords: impact ionization; new sf6; formalism; ionization ... See more keywords
Impact ionization coefficients and critical electric field in GaN
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0050793
Abstract: Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p–n junction diode are experimentally investigated at 223–373 K by novel photomultiplication measurements utilizing above- and below-bandgap illumination. The device has a non-punch-through one-side abrupt p–-n+ junction structure,… read more here.
Keywords: impact ionization; ionization coefficients; critical electric; electric field ... See more keywords
Impact of ionization equilibrium on electrokinetic flow of weak electrolytes in nanochannels.
Sign Up to like & getrecommendations! Published in 2018 at "Nanotechnology"
DOI: 10.1088/1361-6528/aac126
Abstract: Weak electrolyte transport in nanochannels or nanopores has been actively explored in recent experiments. In this paper, we establish a new electrokinetic model where the ionization balance effect of weak electrolytes is outlined, and performed… read more here.
Keywords: impact ionization; equilibrium electrokinetic; weak electrolytes; ionization equilibrium ... See more keywords
Fast high-power thyristors triggered in impact-ionization wave mode
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Instrumentation"
DOI: 10.1088/1748-0221/14/10/p10006
Abstract: GTO-like thyristors 5STH-2045H0002 (4.5 kV, 18 kA/us) developed by ABB semiconductors are currently used at CERN in LHC Beam Dumping System (LBDS): high-power switches with high dI/dt capability and low turn-on delay time are required.… read more here.
Keywords: high power; thyristor; ionization; ionization wave ... See more keywords
Electron-impact ionization of H2O at low projectile energy: Internormalized triple-differential cross sections in three-dimensional kinematics
Sign Up to like & getrecommendations! Published in 2017 at "Physical Review A"
DOI: 10.1103/physreva.95.022701
Abstract: Xueguang Ren,1 Sadek Amami,2 Khokon Hossen,1 Esam Ali,2 ChuanGang Ning,3 James Colgan,4 Don Madison,2 and Alexander Dorn1 1Max-Planck-Institut für Kernphysik, 69117 Heidelberg, Germany 2Physics Department, Missouri University of Science and Technology, Rolla, Missouri 65409, USA… read more here.
Keywords: impact ionization; physics; ionization h2o; kinematics ... See more keywords
Enhancement of impact ionization in Hubbard clusters by disorder and next-nearest-neighbor hopping
Sign Up to like & getrecommendations! Published in 2020 at "Physical Review B"
DOI: 10.1103/physrevb.102.245125
Abstract: We perform time-resolved exact diagonalization of the Hubbard model with time dependent hoppings on small clusters of up to $12$ sites. Here, the time dependence originates from a classic electromagnetic pulse, which mimics the impact… read more here.
Keywords: impact ionization; nearest neighbor; enhancement impact; next nearest ... See more keywords