Impact of varying carbon concentration in SiC S/D asymmetric dual-k spacer for high performance and reliable FinFET
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DOI: 10.1088/1674-4926/39/10/104001
Abstract: We propose a reliable asymmetric dual-k spacer with SiC source/drain (S/D) pocket as a stressor for a Si channel. This enhances the device performance in terms of electron mobility (eMobility), current driving capabilities, transconductance (Gm)… read more here.
Keywords: impact varying; varying carbon; dual spacer; asymmetric dual ... See more keywords