Size control of GaN nanocrystals formed by ion implantation in thermally grown silicon dioxide
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DOI: 10.1063/1.5132604
Abstract: The growth of GaN nanocrystals in an amorphous SiO2 matrix by sequential Ga and N implantation and rapid thermal annealing is reported. The effect of the implantation and annealing conditions on the distribution of the… read more here.
Keywords: microscopy; implantation annealing; growth gan; size ... See more keywords