Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?
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DOI: 10.1134/s1063782619110204
Abstract: The accumulation of structural damage in GaN under irradiation with accelerated F and Ne ions with energies of 1.3 and 3.2 keV/amu is investigated. It is shown that chemical effects during implantation of fluorine ions… read more here.
Keywords: implantation fluorine; structural damage; fluorine ions; accumulation structural ... See more keywords