Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions
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DOI: 10.1134/s106377451702016x
Abstract: The surface layers of Si(001) substrates subjected to plasma-immersion implantation of helium ions with an energy of 2–5 keV and a dose of 5 × 1017 cm–2 have been investigated using high-resolution X-ray reflectivity, Rutherford… read more here.
Keywords: complementary study; helium ions; layer; implantation helium ... See more keywords