Modeling of Fringing Capacitances of Ion-Implanted Double-Gate Junctionless FETs Using Conformal Mapping
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DOI: 10.1109/ted.2019.2937205
Abstract: This article reports an analysis of the fringing capacitances of an ion-implanted double-gate (DG) junctionless (JL) field-effect transistors (FETs). The actual nonintegrable Gaussian function of the ion-implanted channel has been replaced by an integrable Gaussian-like… read more here.
Keywords: fringing capacitances; capacitances ion; gate; implanted double ... See more keywords