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Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2017.04.092
Abstract: Abstract GaN:Dy films were prepared by implanting Dy ions into c-plane (0001) GaN films and a subsequent rapid thermal annealing process. The structural and magnetic properties of samples were investigated by means of X-ray diffraction…
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Keywords:
properties implanted;
structural magnetic;
magnetic properties;
thermal annealing ... See more keywords
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Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.104833
Abstract: Abstract This paper presents the lattice disorder-induced effect by oxygen ion implantation in GaN epitaxial layers. Oxygen ion implantation in GaN epitaxial layers is done with fluencies 5 × 1014 cm−2 and 5 × 1015 cm−2 at 120 keV energy on two different…
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Keywords:
implanted gan;
gan epitaxial;
epitaxial layers;
ion implanted ... See more keywords
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Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/5.0028760
Abstract: The generation of p-type GaN through ion implantation is an attractive proposition in the massive production of GaN-based bipolar devices, whereas the removal of implantation induced lattice disturbances and defects is a difficult exercise and…
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Keywords:
property manipulation;
high dose;
laser annealing;
implanted gan ... See more keywords
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Published in 2022 at "Micromachines"
DOI: 10.3390/mi13020240
Abstract: A small Boron ion (B-ion) dose of 5 × 1014 cm−2 was implanted in a GaN epilayer at an energy of 50 keV, and the sample was subjected to high-temperature rapid thermal annealing (RTA). The…
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Keywords:
implanted gan;
ion implantation;
boron;
resonant raman ... See more keywords