Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 °C
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DOI: 10.1016/j.apsusc.2018.05.228
Abstract: Abstract The implantation-induced defects of crystalline silicon implanted with helium ions to a dose of 5 × 1016/cm2 at 600 °C were investigated. The sample was analyzed by transmission electron microscopy and high-resolution electron microscopy. Faceted cavities are… read more here.
Keywords: helium ions; microscopy; electron microscopy; implanted helium ... See more keywords