Optical response and sensitivity of an ion-implanted MESFET under electron velocity saturation
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DOI: 10.1117/1.oe.58.11.117102
Abstract: Abstract. A simple analytical model for the optical response and sensitivity of an ion-implanted MESFET has been developed with the presence of interface states and interfacial layer at the gate–channel contact. It is assumed that… read more here.
Keywords: optical response; response sensitivity; sensitivity ion; sensitivity ... See more keywords