Analysis of the Forward I–V Characteristics of Al-Implanted 4H-SiC p-i-n Diodes with Modeling of Recombination and Trapping Effects Due to Intrinsic and Doping-Induced Defect States
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DOI: 10.1007/s11664-017-5916-8
Abstract: In this paper, the impact of silicon carbide intrinsic defect states, such as Z1/2 and EH6/7 centers, on the forward current–voltage curves of aluminum (Al)-implanted 4H-SiC p-i-n diodes is investigated by means of a physics-based… read more here.
Keywords: defect states; analysis forward; characteristics implanted; sic diodes ... See more keywords
Probing the origins of magnetism in 2 at% Fe-implanted 4H-SiC
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DOI: 10.1016/j.scriptamat.2020.07.030
Abstract: Abstract Here we reported an about 2 at.% Fe-implanted p-type 4H-SiC Diluted Magnetic Semiconductor (DMS). Scanning Transmission Electron Microscopy (STEM) and Atom Probe Tomography (APT) techniques were used to investigate the origins of ferromagnetic behavior.… read more here.
Keywords: microscopy; magnetism implanted; origins magnetism; spectroscopy ... See more keywords
Helium assisted migration of silver implanted into SiC
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DOI: 10.1016/j.vacuum.2020.109865
Abstract: Abstract The effects of helium (He) in the migration behaviour of silver (Ag) implanted into polycrystalline siclicon carbide (SiC) was investigated. Polycrystalline SiC wafers were first implanted with Ag ions of 360 keV to a fluence… read more here.
Keywords: sic samples; silver implanted; migration; implanted sic ... See more keywords
Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor
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DOI: 10.1063/5.0005061
Abstract: p-doped 4H-SiC substrates were implanted with 57Fe ions at energies ranging from 30 to 160 keV and subjected to a rapid thermal annealing in order to produce a homogeneous Fe concentration inside a 100 nm-thick region in… read more here.
Keywords: properties implanted; semiconductor; magnetic properties; origin magnetic ... See more keywords
Recrystallization Phase in He-Implanted 6H-SiC*
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DOI: 10.1088/0256-307x/34/7/076101
Abstract: The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of recrystallized layers in 15 keV He ion implanted 6H-SiC (0001) wafers are characterized by… read more here.
Keywords: recrystallization; microscopy; recrystallization phase; implanted sic ... See more keywords